2SD2141 Datasheet - Inchange Semiconductor
MFG CO.
Inchange Semiconductor
DESCRIPTION
• High DC Current Gain- : hFE = 1500(Min)@ IC= 3A
• Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 4A
• Incorporating a built-in zener diode
• Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
• Designed for use in ignitor, driver for solenoid, motor and general purpose applications
Part Name
Description
View
MFG CO.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon NPN Darlington Power Transistor
Inchange Semiconductor