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2SD1582 Datasheet - Renesas Electronics

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Part Name
2SD1582

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6 Pages

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MFG CO.
Renesas
Renesas Electronics 

NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS

The 2SD1582 is a single type super high hFE transistor and low collector saturation voltage and high voltage. This transistor is available for broad applications as variety of drives.


FEATURES
• Ultra high hFE
   hFE = 800 to 3200 (@ VCE = 5.0 V, IC = 300 mA)
• High voltage and wide ASO
   VCBO = 60 V, VCEO = 50 V
• Low collector saturation voltage
   VCE(sat) = 0.15 V TYP. (@ IC = 500 A, IB = 5.0 mA)


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