2SC5812 Datasheet - Renesas Electronics
MFG CO.
Renesas Electronics
Application
• High power gain, Low noise figure at low power operation:
|S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)
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Part Name
Description
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MFG CO.
Silicon NPN Epitaxial VHF/UHF wide band amplifier
Renesas Electronics
Silicon NPN Epitaxial VHF/UHF wide band amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial VHF / UHF wide band amplifier
Renesas Electronics
Silicon NPN Epitaxial VHF / UHF wide band amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial VHF / UHF Wide band amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial UHF / VHF wide band amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial UHF / VHF wide band amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial VHF/UHF wide band amplifier
Renesas Electronics
Silicon NPN Epitaxial VHF/UHF Wide band amplifier
Hitachi -> Renesas Electronics