Part Name
2SB696
Description
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MFG CO.
New Jersey Semiconductor
2SB696 Datasheet - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEo=-120V(Min)
• High Current Capability
• Wide Area of Safe Operation
• Complement to Type 2SD732
APPLICATIONS
• Designed for AF power amplifier applications.
• Recommended for output stage of 60W power amplifier.
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MFG CO.
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