2SB1457(2009) Datasheet - Toshiba
MFG CO.

Toshiba
Micro Motor Drive, Hammer Drive Applications
Power Switching Applications
Power Amplifier Applications
• High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)
• Low saturation voltage: VCE (sat) = −1.5 V (max)
(IC = −1 A, IB = −1 mA)
Part Name
Description
View
MFG CO.
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor) ( Rev : 2006 )
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 1997 )
Toshiba