2SB1453 Datasheet - NEC => Renesas Technology
MFG CO.
NEC => Renesas Technology
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SB1453 is a power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost.
FEATURES
• High DC current amplifier ratio
hFE ≥100 (VCE= −5 V, IC= −0.5 A)
• Mold package that does not require an insulating board or insulation bushing
Part Name
Description
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MFG CO.
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
PNP Silicon Epitaxial Transistor for High-speed Switching
Galaxy Semi-Conductor
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics