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2SB1453 Datasheet - NEC => Renesas Technology

2SB1453 image

Part Name
2SB1453

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7 Pages

File Size
134.9 kB

MFG CO.
NEC
NEC => Renesas Technology 

PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING

The 2SB1453 is a power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost.


FEATURES
• High DC current amplifier ratio
   hFE ≥100 (VCE= −5 V, IC= −0.5 A)
• Mold package that does not require an insulating board or insulation bushing


Part Name
Description
View
MFG CO.
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF
Renesas Electronics
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF
Renesas Electronics
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF
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PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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PNP Silicon Epitaxial Transistor for High-speed Switching
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PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF
Renesas Electronics

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