2SA743A Datasheet - New Jersey Semiconductor
MFG CO.
New Jersey Semiconductor
DESCRIPTION
• Good Linearity of hFE
• High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -80V (Min)
• Complement to Type 2SC1212A
APPLICATIONS
• Designed for use in low frequency power amplifier
applications.
Part Name
Description
View
MFG CO.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
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Silicon PNP Power Transistor
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Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
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Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor