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2SA1615 Datasheet - Galaxy Semi-Conductor

2SA1615 image

Part Name
2SA1615

Description
PNP Silicon Epitaxial Transistor for High-speed Switching

Other PDF
  no available.

PDF
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page
5 Pages

File Size
257.9 kB

MFG CO.
BILIN
Galaxy Semi-Conductor BILIN

FEATURES
● Large current capacity:
   IC(DC):-10A,IC(pulse):-15A.
● High hFE and low collector saturation
   voltage:hFE=200MIN.(@VCE=-2V,IC=-0.5A)
                VCE(sat)≤-0.25V(@IC=-4A,IB=-0.05A)


Part Name
Description
View
MFG CO.
A1615-Z
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF
Renesas Electronics
2SA1069-AZ
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology
A1847M
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology
2SA1647
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF
Renesas Electronics
2SA1647
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology
2SA1069
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology
2SA1069
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF
Renesas Electronics
A1843M
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology
2SA1843
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF
Renesas Electronics
2SB1453
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF
NEC => Renesas Technology

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