2SA1235A Datasheet - Galaxy Semi-Conductor
MFG CO.
Galaxy Semi-Conductor
FEATURES
● Small collector to emitter saturation voltage
VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA).
● Excellent lineary DC forward current gain.
● Super mini package for easy mounting.
APPLICATIONS
● PNP epitaxial type transistor designed for low frequency.
● Voltage amplify application.
Part Name
Description
View
MFG CO.
Silicon epitaxial planar transistor.
Wing Shing International Group
Silicon Planar Epitaxial Transistor ( Rev : V2 )
Galaxy Semi-Conductor
Silicon Planar Epitaxial Transistor
Galaxy Semi-Conductor
Silicon Epitaxial Planar Transistor
Galaxy Semi-Conductor
Silicon Epitaxial Planar Transistor ( Rev : V3 )
Galaxy Semi-Conductor
Silicon Epitaxial Planar Transistor
Galaxy Semi-Conductor
Silicon Epitaxial Planar Transistor
Shenzhen Luguang Electronic Technology Co., Ltd
Silicon Epitaxial Planar Transistor
Shanghai Leiditech Electronic Technology Co., Ltd
Silicon Epitaxial Planar Transistor
Galaxy Semi-Conductor
Silicon Epitaxial Planar Transistor ( Rev : V2 )
Galaxy Semi-Conductor
