Revision history
Table 51. Revision history (continued)
Revision
Date
Substantive changes
7
13 May 2013 In the cover feature list:
added “and ECC” at the end of
“Up to 1.5 MB on-chip code flash memory supported with the flash memory controller”
added “with ECC” at the end of “Up to 96 KB on-chip SRAM”
Table 1 (MPC5607B family comparison), updated SCI (LINFlex) values, 8 channels for
both MPC5605B and MPC5606B 176-pin.
Table 12 (Recommended operating conditions (3.3 V)), updated conditions of TA values
and relative footnote.
Table 13 (Recommended operating conditions (5.0 V)), updated conditions of TA values
and relative footnote.
Table 20 (Output pin transition times), replaced Ttr with ttr
Table 24 (Reset electrical characteristics), replaced Ttr with ttr
Updated Section 4.17.2, “Input impedance and ADC accuracy
Table 26 (Low voltage detector electrical characteristics), changed VLVDHV3L(min) and
VLVDHV3BL(min) from 2.7 V to 2.6 V.
Table 28 (Program and erase specifications), added footnote about tESRT
Table 40 (FMPLL electrical characteristics), deleted footnote relative to maximum value
of fCPU
Table 44 (ADC_0 conversion characteristics (10-bit ADC_0)), changed IADC0run value
from 40 mA to 5 mA.
Table 47 (DSPI characteristics), in the heading row, replaced
DSPI0/DSPI1/DSPI5/DSPI6 with DSPI0/DSPI1/DSPI3/DSPI5
8
18 Apr 2014 Added “K=TSMC Fab” against the Fab and mask indicator in Figure 43 (Commercial
product code structure).
MPC5607B Microcontroller Data Sheet, Rev. 8
Freescale Semiconductor
111