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2N6358 View Datasheet(PDF) - New Jersey Semiconductor

Part Name
Description
MFG CO.
2N6358
NJSEMI
New Jersey Semiconductor 
2N6358 Datasheet PDF : 2 Pages
1 2
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdwon voltage lc=0.2A ;IB=0
VcEssl-1 Collector-emitter saturation voltage lc=10A;la=40mA
VcEsat-2 Collector-emitter saturation voltage IC=20A;IB=1A
VBEsat Base-emitter saturation voltage
lc=20A;1B=1A
VBE
Base-emitter on voltage
ICEO
Collector cut-off current
lc=10A; VCE=4V
VCE=60V;IB=0
ICBO
Collector cut-off current
VCB=80V; IE=0
IEBO
Emitter cut-off current
VEB=5V; lc=0
IVE-I
DC current gain
lc=4A ; VCE=5V
hpE-2
DC current gain
IC=20A ; VCE=5V
WIN TYP. MAX UNIT
60
V
2.0
V
4.0
V
4.0
V
2.8
V
1.0
mA
0.5
mA
5.0
mA
1500
10000
100
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