isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD2141
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
330
430
V
V(BR)CBO Collector-Base Breakdown Voltage
IC=0.1mA; IE= 0
330
430
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 20mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 20mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 20mA
ICBO
Collector Cutoff Current
VCB= 330V; IE= 0
1.5
V
2.0
V
10
μA
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
fT
Current-Gain—Bandwidth Product
COB
Output Capacitance
VEB= 6V; IC= 0
IC= 3A; VCE= 2V
1500
IE= 0.5A ; VCE= 12V
20
IE=0 ; VCB=10V;ftest=1.0MHz
95
20
mA
MHz
pF
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark