2SB1055 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

MFG CO.

2SB1055

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

2SB1055

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcE(sat) Collector-Emitter Saturation Voltage lc= -4A; IB= -0.4A

VeE(on) Base-Emitter On Voltage

lc= -4A; VCE= -5V

ICBO

Collector Cutoff Current

VCB=-120V;IE=0

IEBO

Emitter Cutoff Current

VEB= -3V; lc= 0

hpE-1

DC Current Gain

lc= -20mA; Vce= -5V

hpE-2

DC Current Gain

lc= -1A; VCE= -5V

hpE-3

DC Current Gain

lc= -4A; VCE= -5V

COB

Output Capacitance

lE=0;VCE=-10V;ftes,=1MHz

fj

Current-Gain — Bandwidth Product

Ic—0.5A; VCE= -5V;ftest=1MHz

MIN TYP. MAX UNIT

-2.0 V

-1.8

V

-50 u A

-50 M A

20

40

200

20

230

PF

20

MHz

• hpE-2 Classifications

R

Q

P

40-80

60-120 100-200

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