2SB1055 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
2SB1055 Datasheet PDF : 2 Pages
| |||
^s.m.L-Condu.^01 ^P^
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1055
DESCRIPTION
• Low Collector Saturation Voltage-
: VcE<satr -2.0V(Max)@lc= -4A
• Wide Area of Safe Operation
• Complement to Type 2SD1486
APPLICATIONS
• Designed for high power amplification.
1-
v
ki
123
3
^ PIN 1.BASE
2. COLLECTOR
3. EMITTER
TC-3PF3 package
-* B -
i—
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-6
A
I CM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25'C
PC
Collector Power Dissipation
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-10
A
3
W
70
150
•c
-55-150
•c
i T^
A
K
I
**
-**— [)
—^•4
—p- -*-
I
*•*>?-*•• ^
DIM
A
B
C
D
F
H
j
K
L
N
Q
R
S
T
U
mm
MIN MAX
20.70 21.30
14.70 15,30
4.80 5,20
0.90 1.10
3.20 3.40
3.70 4.30
0.50 0.70
16.40 17,00
1.90 2.10
10,80 11.00
5.60 6.00
1.80 2,20
3,10 3,50
S.70 9.30
O.S5 0.75
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to he both accurate inul reliable at the time of noi
lo press. I louever, N.I Semi-Conductors assumes no responsihilit> for an> errors or omissions discovered in its use.
NJ Senii-Conduclors encoura.ues customers to verily that tlalashcels are current before placing orders.
Quality 5emi-Conductors
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