2SB1052 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

MFG CO.

2SB1052

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

2SB1052

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0

-60

V

VcE(sat) Collector-Emitter Saturation Voltage

lc= -2A; IB= -0.2A

VBE(OH) Base-Emitter On Voltage

lc=-1A;VCE=-4V

ICES

Collector Cutoff Current

VCE= -60V; VBE= 0

-2.0

V

-1.2

V

-200 u A

ICEO

Collector Cutoff Current

VCE= -30V; IB= 0

-300 u A

IEBO

Emitter Cutoff Current

VEB= -6V; lc= 0

-1

mA

hpE-i

DC Current Gain

lc= -0.1 A; VCE= -4V

35

hpE-2

DC Current Gain

lc= -1A; VCE= -4V

40

250

fr

Current-Gain — Bandwidth Product

lc=-0.5A; VCE= -10V;ftest=10MHz

25

MHz

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

lc=-1A, IB1=-IB2=-0.1A

0.1

Ms

1.5

Ms

0.3

us

• hFE.2 Classifications

R

Q

P

40-90 70-150 120-250

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