2SB1052 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
2SB1052 Datasheet PDF : 2 Pages
| |||
'Iziis.u ^E.mi-L-onaucto'i Lpiociucti, [inc.
C^
±J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1052
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max)@lc= -2A
• Good Linearity of hFE
• Complement to Type 2SD1480
APPLICATIONS
• Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
f
1 23
pIH: 1 Base
2 Collector
3 Emitter
TO-220Fa package
_^
j
$ r<
A
|—
rF
t
•J,
1•
J, *
H
T
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
-60
V
V
-6
V
:«. —- R -
D
*•
\c
Collector Current-Continuous
I CM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25"C
PC
Collector Power Dissipation
@ TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-2
A
A
A
2
W
25
150
•c
-55-150
•c
mm
DIM WIN MAX
A 16.85 17.15
B S.54 10.10
C 4.35 4.65
D 0.75 0.90
F 320 3.40
G 6.90 7,20
H 5.15 5.4S
J 0.4S 0.75
K 13.35 13.S5
L 1.10 1.30
N 4.S8 5.18
Q 4.85 5.15
R 2.66. 3.25
S 2.70 2.90
U 1.75 2.05
V 1.30 1.50
N,l Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions nithout
notice. Inrbrtrnition furnished hy N.I Semi-Conductors is believed to he both ;iceur;ite mid reliable at the time of going
lo press. I louever, N,l Semi-Conductors iissuines no responsibility lor any errors or omissions discovered in itsuse.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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