M29W320DB90N6_03 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
M29W320DB90N6_03 Datasheet PDF : 44 Pages
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M29W320DT, M29W320DB
Table 23. CFI Query System Interface Information
Address
x16
x8
Data
Description
VCC Logic Supply Minimum Program/Erase voltage
1Bh
36h
0027h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
VCC Logic Supply Maximum Program/Erase voltage
1Ch
38h
0036h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
VPP [Programming] Supply Minimum Program/Erase voltage
1Dh
3Ah
00B5h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
VPP [Programming] Supply Maximum Program/Erase voltage
1Eh
3Ch
00C5h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
1Fh
3Eh
0004h Typical timeout per single byte/word program = 2n µs
20h
40h
0000h Typical timeout for minimum size write buffer program = 2n µs
21h
42h
000Ah Typical timeout per individual block erase = 2n ms
22h
44h
0000h Typical timeout for full chip erase = 2n ms
23h
46h
0005h Maximum timeout for byte/word program = 2n times typical
24h
48h
0000h Maximum timeout for write buffer program = 2n times typical
25h
4Ah
0004h Maximum timeout per individual block erase = 2n times typical
26h
4Ch
0000h Maximum timeout for chip erase = 2n times typical
Value
2.7V
3.6V
11.5V
12.5V
16µs
NA
1s
NA
512µs
NA
16s
NA
35/44
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