STM32L151V6H6D(2013) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STM32L151V6H6D
(Rev.:2013)
(Rev.:2013)
STMicroelectronics
STM32L151V6H6D Datasheet PDF : 121 Pages
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STM32L151x6/8/B, STM32L152x6/8/B
Electrical characteristics
6.3.3
Embedded internal reference voltage
The parameters given in Table 16 are based on characterization results, unless otherwise
specified.
Table 16. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min Typ Max Unit
VREFINT
(1)
out
IREFINT
Internal reference voltage
Internal reference current
consumption
– 40 °C < TJ < +105 °C 1.202 1.224 1.242
V
1.4 2.3
µA
TVREFINT
Internal reference startup time
2
3
ms
VVREF_MEAS
VDDA and VREF+ voltage during
VREFINT factory measure
2.99 3 3.01
V
AVREF_MEAS
Accuracy of factory-measured
VREF value(2)
Including uncertainties
due to ADC and
VDDA/VREF+ values
±5
mV
TCoeff(3)
ACoeff(3)
VDDCoeff(3)
Temperature coefficient
Long-term stability
Voltage coefficient
–40 °C < TJ < +105 °C
0 °C < TJ < +50 °C
1000 hours, T= 25 °C
3.0 V < VDDA < 3.6 V
20
50
ppm/°C
20
1000 ppm
2000 ppm/V
TS_vrefint(3)(4)
ADC sampling time when
reading the internal reference
voltage
5
10
µs
TADC_BUF(3)
Startup time of reference voltage
buffer for ADC
10
µs
IBUF_ADC(3)
Consumption of reference
voltage buffer for ADC
13.5
IVREF_OUT(3)
CVREF_OUT(3)
VREF_OUT output current(5)
VREF_OUT output load
Consumption of reference
ILPBUF(3)
voltage buffer for VREF_OUT
730
and COMP
VREFINT_DIV1(3)
VREFINT_DIV2(3)
VREFINT_DIV3(3)
1/4 reference voltage
1/2 reference voltage
3/4 reference voltage
24 25
49 50
74 75
1. Tested in production;
2. The internal VREF value is individually measured in production and stored in dedicated EEPROM bytes.
3. Guaranteed by design, not tested in production.
4. Shortest sampling time can be determined in the application by multiple iterations.
5. To guarantee less than 1% VREF_OUT deviation.
25
1
50
1200
26
51
76
µA
µA
pF
nA
%
VREFINT
Doc ID 17659 Rev 8
53/121
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