PIC16F57T-ESS(2004) View Datasheet(PDF) - Microchip Technology

Part Name

Description

MFG CO.

PIC16F57T-ESS
(Rev.:2004)

Flash-Based, 8-Bit CMOS Microcontroller Series

Microchip Technology 

PIC16F5X

11.0 ELECTRICAL SPECIFICATIONS FOR PIC16F54/57

Absolute Maximum Ratings(†)

Ambient Temperature under bias ......................................................................................................... -40°C to +125°C

Storage Temperature ........................................................................................................................... -65°C to +150°C

Voltage on VDD with respect to VSS ............................................................................................................ 0V to +6.5V

Voltage on MCLR with respect to VSS(1) ................................................................................................... 0V to +13.5V

Voltage on all other pins with respect to VSS ............................................................................... -0.6V to (VDD + 0.6V)

Total power dissipation(2) .................................................................................................................................. 800 mW

Max. current out of VSS pin ................................................................................................................................ 150 mA

Max. current into VDD pin ................................................................................................................................... 100 mA

Max. current into an input pin (T0CKI only)....................................................................................................... ±500 µA

Input clamp current, IIK (VI < 0 or VI > VDD) ....................................................................................................... ±20 mA

Output clamp current, IOK (VO < 0 or VO > VDD) ................................................................................................ ±20 mA

Max. output current sunk by any I/O pin .............................................................................................................. 25 mA

Max. output current sourced by any I/O pin ......................................................................................................... 25 mA

Max. output current sourced by a single I/O port (PORTA, B or C) ..................................................................... 50 mA

Max. output current sunk by a single I/O port (PORTA, B or C)........................................................................... 50 mA

Note 1: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.

Thus, a series resistor of 50 to 100Ω should be used when applying a “low” level to the MCLR pin rather

than pulling this pin directly to VSS.

2: Power Dissipation is calculated as follows: Pdis = VDD x {IDD – ∑ IOH} + ∑ {(VDD – VOH) x IOH} + ∑(VOL x IOL)

†NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

 2004 Microchip Technology Inc.

DS41213C-page 59

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