Electrical characteristics
STM32F100xC, STM32F100xD, STM32F100xE
5.3.9
5.3.10
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
Table 28. Flash memory characteristics
Symbol
Parameter
Conditions
Min(1) Typ Max(1) Unit
tprog 16-bit programming time
TA = –40 to +105 °C
40 52.5 70 µs
tERASE Page (2 KB) erase time
TA = –40 to +105 °C
20
40 ms
tME Mass erase time
TA = –40 to +105 °C
20
40 ms
Read mode
fHCLK = 24 MHz, VDD = 3.3 V
20 mA
IDD Supply current
Write / Erase modes
fHCLK = 24 MHz, VDD = 3.3 V
5 mA
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
50 µA
Vprog Programming voltage
2
3.6
V
1. Guaranteed by design, not tested in production.
Table 29. Flash memory endurance and data retention
Symbol Parameter
Conditions
Value
Min(1) Typ
NEND Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
1 kcycle(2) at TA = 85 °C
30
tRET Data retention 1 kcycle(2) at TA = 105 °C
10
10 kcycles(2) at TA = 55 °C
20
1. Based on characterization not tested in production.
2. Cycling performed over the whole temperature range.
Max
Unit
kcycles
Years
FSMC characteristics
Asynchronous waveforms and timings
Figure 15 through Figure 18 represent asynchronous waveforms and Table 30 through
Table 33 provide the corresponding timings. The results shown in these tables are obtained
with the following FSMC configuration:
● AddressSetupTime = 0
● AddressHoldTime = 1
● DataSetupTime = 1
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