BAS70WS View Datasheet(PDF) - Galaxy Semi-Conductor

Part Name

Description

MFG CO.

BAS70WS

Schottky barrier diodes

Galaxy Semi-Conductor 

Schottky barrier diodes

FEATURES

 Low turn-on voltage

 Fast switching

Pb

Lead-free

 PN junction guard for transient and ESD protection

Production specification

BAS70WS

APPLICATIONS

 Surface mount fast switching diode

ORDERING INFORMATION

Type No.

Marking

BAS70WS

K73

SOD-323

Package Code

SOD-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Characteristic

Symbol

Value

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC Reverse Voltage

RMS reverse voltage

Forward Continuous Current

Peak forward surge current@<1.0s

Power Dissipation

Thermal Resistance Junction to Ambient

Operating Junction Temperature Range

Storage Temperature Range

VRRM

VRWM

VR

VR（RMS）

IF

IFSM

Pd

RθJA

Tj

TSTG

70

49

70

100

200

625

-55 to +125

-65 to +150

Unit

V

V

mA

mA

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Forward Voltage

Symbol Min

V(BR)R

70

VF

-

Reverse Current

IR

-

Capacitance between terminals CT

-

Reverse Recovery Time

trr

-

Max Unit

-

V

410

mV

1000

100

nA

2

pF

5

ns

Test Condition

IR=10μA

IF=1.0mA

IF=15mA

VR=50V

VR=0,f=1.0MHz

IF=IR=10mA,

RL=100Ω

B012

Rev.A

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