STPS30H100DJF-TR(2012) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STPS30H100DJF-TR Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
STPS30H100DJF
Table 2. Absolute ratings (limiting values, anode terminals short circuited)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
100
V
IF(RMS) Forward rms current
45
A
IF(AV) Average forward current δ = 0.5
Tc = 100 °C
30
A
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal
250
A
PARM Repetitive peak avalanche power
tp = 1 µs, Tj = 25 °C
3700
W
VARM
Maximum repetitive peak avalanche
voltage
tp < 1 µs, Tj < 150 °C
IAR < 9.3A
120
V
Tstg Storage temperature range
-65 to +175 °C
Tj Maximum operating junction temperature (1)
150
°C
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3.
Symbol
Thermal resistance
Parameter
Value
Unit
Rth(j-c) Junction to case
2
°C/W
Table 4.
Symbol
Static electrical characteristics (anode terminals short circuited)
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
Reverse leakage
current
Tj = 25 °C
Tj = 125 °C VR =VRRM
-
-
Tj = 25 °C
-
IF = 15 A
VF(1) Forward voltage drop Tj = 125 °C
-
Tj = 25 °C
-
IF = 30 A
Tj = 125 °C
-
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.60 x IF(AV) + 0.00367 x IF2(RMS)
-
6
µA
2.5
6.5
mA
-
0.76
0.56 0.62
V
-
0.84
0.63 0.71
2/8
Doc ID 023024 Rev 1
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