STM8S207MBT3TR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STM8S207MBT3TR

Performance line, 24 MHz STM8S 8-bit MCU, up to 128 KB Flash, integrated EEPROM, 10-bit ADC, timers, 2 UARTs, SPI, I²C, CAN

STMicroelectronics 

Electrical characteristics

STM8S207xx, STM8S208xx

Electromagnetic interference (EMI)

Emission tests conform to the SAE IEC 61967-2 standard for test software, board layout and

pin loading.

Table 48. EMI data

Symbol Parameter

General conditions

Conditions

Monitored

frequency band

SEMI

Peak level

SAE EMI

level

VDD = 5 V

TA = 25 °C

LQFP80 package

conforming to SAE IEC

61967-2

0.1MHz to 30 MHz

30 MHz to 130 MHz

130 MHz to 1 GHz

SAE EMI level

1. Data based on characterization results, not tested in production.

Max fHSE/fCPU(1)

8 MHz/ 8 MHz/ 8 MHz/

8 MHz 16 MHz 24 MHz

Unit

15

20

24

18

21

16 dBµV

-1

1

4

2

2.5

2.5

Absolute maximum ratings (electrical sensitivity)

Based on two different tests (ESD and LU) using specific measurement methods, the

product is stressed in order to determine its performance in terms of electrical sensitivity.

For more details, refer to the application note AN1181.

Electrostatic discharge (ESD)

Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test

conforms to the JESD22-A114A/A115A standard. For more details, refer to the application

note AN1181.

Table 49. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

Unit

VESD(HBM)

Electrostatic discharge voltage

(Human body model)

TA = 25°C, conforming to

JESD22-A114

A

VESD(CDM)

Electrostatic discharge voltage

(Charge device model)

TA= 25°C, conforming to

JESD22-C101

IV

2000

V

1000

V

1. Data based on characterization results, not tested in production.

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Doc ID 14733 Rev 12

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