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STM32F100C8H6B View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
STM32F100C8H6B Datasheet PDF : 96 Pages
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Electrical characteristics
STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Figure 21. Typical application with a 32.768 kHz crystal
Resonator with
integrated capacitors
CL1
OSC32_IN
32.768 KH z
resonator
RF
OSC32_OU T
CL2
Bias
controlled
gain
fLSE
STM32F10xxx
ai14129b
5.3.7
Internal clock source characteristics
The parameters given in Table 23 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 8.
High-speed internal (HSI) RC oscillator
Table 23. HSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min Typ Max Unit
fHSI Frequency
-
-
8
DuCy(HSI) Duty cycle
ACCHSI Accuracy of HSI oscillator
-
45
-
TA = –40 to 105 °C(2) -2.4
-
TA = –10 to 85 °C(2) -2.2
-
TA = 0 to 70 °C(2)
-1.9
-
TA = 25 °C
tsu(HSI)(3) HSI oscillator startup time
-
IDD(HSI)(3) HSI oscillator power consumption
-
-1
-
1
-
-
80
1. VDD = 3.3 V, TA = –40 to 105 °C °C unless otherwise specified.
2. Guaranteed by characterization results.
3. Guaranteed by design. Not tested in production
- MHz
55 %
2.5 %
1.3 %
1.3 %
1
%
2
µs
100 µA
50/96
DocID16455 Rev 9

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