STM32F100VBT7BTR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STM32F100VBT7BTR

Low & medium-density value line, advanced ARM®-based 32-bit MCU with 16 to 128 KB Flash, 12 timers, ADC, DAC & 8 comm interfaces

STMicroelectronics 

STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB

Electrical characteristics

Note:

5.3.2

5.3.3

Table 8. General operating conditions (continued)

Symbol

Parameter

Conditions

Min Max Unit

LQFP100

Power dissipation at TA =

LQFP64

PD

81505°C°Cfofrorsusfufifxfix67o(2r )TA =

TFBGA64

LQFP48

-

434

-

444

mW

-

308

-

363

Ambient temperature for 6

suffix version

Maximum power dissipation –40 85

Low power dissipation(3)

–40 105

°C

TA

Ambient temperature for 7

suffix version

Maximum power dissipation –40 105

Low power dissipation(3)

–40 125

°C

6 suffix version

TJ

Junction temperature range

7 suffix version

–40 105

°C

–40 125

1. When the ADC is used, refer to Table 42: ADC characteristics.

2.

cIfhTaAraisctleorwisetirc, shiognhepraPgeD

values

89).

are

allowed

as

long

as

TJ

does

not

exceed

TJmax

(see

Table

6.5:

Thermal

3.

In low

Table

6p.o5w: Terhdeirsmsaiplacthioanrasctateteri,sTticAscoann

be extended

page 89).

to

this

range

as

long

as

TJ

does

not

exceed

TJmax

(see

It is recommended to power VDD and VDDA from the same source. A maximum difference of

300 mV between VDD and VDDA can be tolerated during power-up and operation.

Operating conditions at power-up / power-down

Subject to general operating conditions for TA.

Table 9. Operating conditions at power-up / power-down

Symbol

Parameter

Min

Max

Unit

tVDD

VDD rise time rate

VDD fall time rate

0

∞

µs/V

20

∞

Embedded reset and power control block characteristics

The parameters given in Table 10 are derived from tests performed under the ambient

temperature and VDD supply voltage conditions summarized in Table 8.

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