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STM32F100R4H7BTR(2010) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
STM32F100R4H7BTR Datasheet PDF : 84 Pages
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STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
Table 19. High-speed external user clock characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
fHSE_ext
User external clock source
frequency(1)
1
8
24 MHz
VHSEH
VHSEL
OSC_IN input pin high level voltage
OSC_IN input pin low level voltage
0.7VDD
VSS
VDD
V
0.3VDD
tw(HSE)
tw(HSE)
tr(HSE)
tf(HSE)
Cin(HSE)
OSC_IN high or low time(1)
OSC_IN rise or fall time(1)
OSC_IN input capacitance(1)
16
ns
20
5
pF
DuCy(HSE) Duty cycle
45
55
%
IL
OSC_IN Input leakage current
VSS VIN VDD
±1 µA
1. Guaranteed by design, not tested in production.
Low-speed external user clock generated from an external source
The characteristics given in Table 20 result from tests performed using an low-speed
external clock source, and under the ambient temperature and supply voltage conditions
summarized in Table 8.
Table 20. Low-speed external user clock characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
fLSE_ext
User external clock source
frequency(1)
32.768 1000 kHz
VLSEH
VLSEL
OSC32_IN input pin high level
voltage
OSC32_IN input pin low level
voltage
0.7VDD
VSS
VDD
V
0.3VDD
tw(LSE)
tw(LSE)
OSC32_IN high or low time(1)
450
tr(LSE)
tf(LSE)
OSC32_IN rise or fall time(1)
Cin(LSE) OSC32_IN input capacitance(1)
5
DuCy(LSE) Duty cycle
30
IL
OSC32_IN Input leakage current VSS VIN VDD
1. Guaranteed by design, not tested in production.
ns
50
pF
70
%
±1
µA
Doc ID 16455 Rev 2
45/84

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