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STM32F100VB(2010) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
STM32F100VB Datasheet PDF : 84 Pages
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STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
5.3.2
Table 8. General operating conditions (continued)
Symbol
Parameter
Conditions
Min Max Unit
VBAT Backup operating voltage
Power dissipation at TA =
PD
85 °C for suffix 6 or TA =
105 °C for suffix 7(2)
LQFP100
LQFP64
TFBGA64
LQFP48
1.8 3.6
V
434
444
mW
308
363
Ambient temperature for 6
suffix version
Maximum power dissipation –40 85
Low power dissipation(3)
–40 105
°C
TA
Ambient temperature for 7
suffix version
Maximum power dissipation –40 105
Low power dissipation(3)
–40 125
°C
6 suffix version
TJ
Junction temperature range
7 suffix version
–40 105
°C
–40 125
1. When the ADC is used, refer to Table 41: ADC characteristics.
2. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal
characteristics on page 79).
3. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Table 6.2: Thermal characteristics on page 79).
Operating conditions at power-up / power-down
Subject to general operating conditions for TA.
Table 9. Operating conditions at power-up / power-down
Symbol
Parameter
Min
Max
Unit
tVDD
VDD rise time rate
VDD fall time rate
0
µs/V
20
5.3.3
Embedded reset and power control block characteristics
The parameters given in Table 10 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 8.
Doc ID 16455 Rev 2
35/84

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