M25P10-A
DC and AC parameters
Table 18. AC Characteristics (25MHz Operation, Device Grade 6 or 3)
Test conditions specified in Table 10 and Table 12
Symbol Alt.
Parameter
Min. Typ. Max. Unit
Clock Frequency for the following
fC
fC instructions: FAST_READ, PP, SE, BE, DP, D.C.
RES, WREN, WRDI, RDSR, WRSR
25
MHz
fR
Clock Frequency for READ instructions
D.C.
tCH(1) tCLH Clock High Time
18
tCL(1)
tCLL Clock Low Time
18
tCLCH(2)
Clock Rise Time(3) (peak to peak)
0.1
tCHCL(2)
Clock Fall Time(3) (peak to peak)
0.1
tSLCH tCSS S Active Setup Time (relative to C)
10
tCHSL
S Not Active Hold Time (relative to C)
10
tDVCH tDSU Data In Setup Time
5
tCHDX tDH Data In Hold Time
5
tCHSH
S Active Hold Time (relative to C)
10
tSHCH
S Not Active Setup Time (relative to C)
10
tSHSL tCSH S Deselect Time
100
tSHQZ(2) tDIS Output Disable Time
tCLQV
tV Clock Low to Output Valid
tCLQX tHO Output Hold Time
0
tHLCH
HOLD Setup Time (relative to C)
10
tCHHH
HOLD Hold Time (relative to C)
10
tHHCH
HOLD Setup Time (relative to C)
10
tCHHL
HOLD Hold Time (relative to C)
10
tHHQX(2) tLZ HOLD to Output Low-Z
tHLQZ(2) tHZ HOLD to Output High-Z
tWHSL(4)
Write Protect Setup Time
20
tSHWL(4)
Write Protect Hold Time
100
tDP(2)
S High to Deep Power-down Mode
tRES1(2)
S High to Standby Mode without Electronic
Signature Read
20
MHz
ns
ns
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
15
ns
15
ns
ns
ns
ns
ns
ns
15
ns
20
ns
ns
ns
3
µs
3 or 30(5) µs
tRES2(2)
S High to Standby Mode with Electronic
Signature Read
1.8 or 30(5) µs
1. tCH + tCL must be greater than or equal to 1/ fC
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set to 1.
5. It is 30µs in devices produced with the “X” process technology (grade 3 devices are only produced using
the “X” process technology). Details of how to find the process letter on the device marking are given in the
Application note AN1995.
39/49