STL7N80K5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL7N80K5
STMicroelectronics
STL7N80K5 Datasheet PDF : 17 Pages
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STL7N80K5
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VGS
ID
ID
IDM(1)
PTOT
dv/dt (2)
dv/dt (3)
Tj
Tstg
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Operating junction temperature range
Storage temperature range
Notes:
(1)Pulse width limited by safe operating area
(2)ISD ≤3.6 A, di/dt ≤100 A/μs, VDS(peak) ≤V(BR)DSS
(3)VDS ≤ 640 V
Symbol
Rthj-case
Rthj-pcb
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Symbol
IAR
EAS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Electrical ratings
Value
±30
3.6
2.3
14
42
4.5
50
- 55 to 150
Unit
V
A
A
A
W
V/ns
°C
Value
3
59
Unit
°C/W
°C/W
Value
Unit
2
A
88
mJ
DocID025551 Rev 2
3/17
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