STF18N60M2(2014) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STF18N60M2
(Rev.:2014)

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220FP package

STMicroelectronics 

STF18N60M2

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg

Power MOSFET in a TO-220FP package

Datasheet − production data

Features

3

2

1

TO-220FP

Figure 1. Internal schematic diagram

AM15572v1

Order code VDS @ TJmax RDS(on) max ID

STF18N60M2

650 V

0.28 Ω 13 A

• Extremely low gate charge

• Lower RDS(on) x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

• LLC converters, resonant converters

Description

This device is an N-channel Power MOSFET

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. This

revolutionary Power MOSFET associates a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

Order code

STF18N60M2

Table 1. Device summary

Marking

Package

18N60M2

TO-220FP

February 2014

This is information on a product in full production.

DocID024729 Rev 3

Packaging

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