ACST610-8FPTR(2009) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
ACST610-8FPTR Datasheet PDF : 15 Pages
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Characteristics
1
Characteristics
ACST6
Table 2.
Symbol
Absolute ratings (limiting values)
Parameter
IT(RMS) On-state rms current (full sine wave)
TO-220FPAB
TO-220AB/
D²PAK / I²PAK
D²PAK with
1 cm2 copper
Tc = 92 °C
Tc = 106 °C
Tamb = 62 °C
ITSM
I2t
Non repetitive surge peak on-state current F = 60 Hz
Tj initial = 25 °C, ( full cycle sine wave)
F = 50 Hz
I2t for fuse selection
tp = 16.7 ms
tp = 20 ms
tp = 10 ms
dI/dt
Critical rate of rise on-state current
IG = 2 x IGT, (tr ≤ 100 ns)
F = 120 Hz
VPP Non repetitive line peak pulse voltage (1)
Tj = 125 °C
Tj = 25 °C
PG(AV) Average gate power dissipation
Tj = 125 °C
PGM Peak gate power dissipation (tp = 20 µs)
Tj = 125 °C
IGM Peak gate current (tp = 20 µs)
Tj = 125 °C
Tstg Storage temperature range
Tj
Operating junction temperature range
Tl
Maximum lead solder temperature during 10 ms (at 3 mm from plastic case)
VINS(RMS) Insulation rms voltage
TO-220FPAB
1. According to test described in IEC 61000-4-5 standard and Figure 19.
Table 3. Electrical characteristics
Symbol
Test conditions
Quadrant
IGT(1) VOUT = 12 V, RL = 33 Ω
I - II - III
VGT VOUT = 12 V, RL = 33 Ω
I - II - III
VGD
IH(2)
VOUT = VDRM, RL = 3.3 kΩ
IOUT = 500 mA
I - II - III
IL
IG = 1.2 x IGT
I - III
IL
IG = 1.2 x IGT
II
dV/dt(2) VOUT = 67 % VDRM, gate open
(dI/dt)c(2) (dV/dt)c = 15 V/µs
VCL ICL = 0.1 mA, tp = 1 ms
1. Minimum IGT is guaranteed at 5% of IGT max
2. For both polarities of OUT pin referenced to COM pin
Tj
25 °C
25 °C
125 °C
25 °C
25 °C
25 °C
125 °C
125 °C
25 °C
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
Value
6
1.5
47
45
13
100
2
0.1
10
1.6
-40 to +150
-40 to +125
260
1500
Value
10
1.0
0.2
25
30
40
500
3.5
850
Unit
A
A
A
A2s
A/µs
kV
W
W
A
°C
°C
°C
V
Unit
mA
V
V
mA
mA
mA
V/µs
A/ms
V
2/15
Doc ID 7297 Rev 9
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