NAND04GW3C2N6F View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

NAND04GW3C2N6F

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

STMicroelectronics 

12 DC and AC parameters

NAND04GA3C2A, NAND04GW3C2A

Table 18. DC Characteristics, VDDQ 3V Devices(1)

Symbol

Parameter

Test Conditions

Min

IDD1

Operating

Sequential

Read

tRLRL minimum

E=VIL, IOUT = 0 mA

-

IDD2

Current

Program

-

-

IDD3

Erase

-

-

IDD4

Standby current (TTL)

E=VIH, WP=0/VDD

IDD5

Standby Current (CMOS)

E=VDD-0.2,

-

WP=0/VDD

ILI

Input Leakage Current

VIN= 0 to 3.6V

-

ILO

Output Leakage Current

VOUT= 0 to 3.6V

-

VIH

Input High Voltage

-

2.0

VIL

Input Low Voltage

-

-0.3

VOH

Output High Voltage Level

IOH = -400µA

2.4

VOL

Output Low Voltage Level

IOL = 2.1mA

-

IOL (RB)

Output Low Current (RB)

VOL = 0.4V

8

1. DC Characteristics for VDDQ 1.8V devices are still to be determined.

Typ

Max Unit

10

20

mA

20

30

mA

15

20

mA

1

mA

10

50

µA

-

±10

µA

-

±10

µA

-

VDD+0.3 V

-

0.8

V

-

-

V

-

0.4

V

10

mA

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