MUN5113DW1T1(2003) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

MFG CO.

MUN5113DW1T1
(Rev.:2003)

Dual Bias Resistor Transistors

ON Semiconductor 

MUN5111DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5134DW1T1

1

IC/IB = 10

75°C

0.1

−25°C 25°C

1000

100

75°C

VCE = 10 V

TA = −25°C

25°C

0.01

10

0.001

0

10

20

30

40

IC, COLLECTOR CURRENT (mA)

Figure 52. VCE(sat) versus IC

1

50

1

10

100

IC, COLLECTOR CURRENT (mA)

Figure 53. DC Current Gain

3.5

3

f = 1 MHz

lE = 0 V

2.5

TA = 25°C

2

1.5

1

0.5

0

0 5 10 15 20 25 30 35 40 45 50

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 54. Output Capacitance

100

75°C

10

1

25°C

0.1

0.01

TA = −25°C

VO = 5 V

0.001

01

23 4567 8

Vin, INPUT VOLTAGE (VOLTS)

9 10

Figure 55. Output Current versus Input Voltage

100

10

TA = −25°C

1

25°C

75°C

0.1

0

VO = 0.2 V

10

20

30

40

50

IC, COLLECTOR CURRENT (mA)

Figure 56. Input Voltage versus Output Current

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