MITSUBISHI SEMICONDUCTOR < STANDERD LINEAR IC >
M62281P/FP
GENERAL PURPOSE CURRENT MODE PWM CONTROL IC
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C, unless otherwise noted)
Symbol
Parameter
Condition
Rating
Vcc
IOUT
VCT
VEA IN
VCLM
VCS
Pd
Supply voltage
Output current
CT terminal Supply voltage
EA IN terminal Supply voltage
CLM terminal Supply voltage
CURENT SENSE terminal Supply voltage
Power dissipation
Ktheta
Topr
Tstg
Thermal derating
Operating temperature
Storage temperature
Ta≥25˚C
Continuous
Peak
P
FP
P
FP
36
150
1.0
36
10
- 0.3 ~ + 4.0
- 0.3 ~ + 5.8
1500
440
12
3.52
- 20 ~ + 85
- 40 ~ + 150
ELECTRICAL CHARACTERISTICS (Ta=25˚C, Vcc=14V, unless otherwise noted)
Unit
V
mA
A
V
V
V
V
mW
mW/˚C
˚C
˚C
Block Symbol
Parameter
Test condition
Vcc
Supply voltage range
Vcc(START) Operation start-up voltage
Vcc(STOP)
∆Vcc
Operation stop voltage
Start-up and stop
voltage difference
IccL
Stand-by current
Vcc=Vcc(START) - 0.5V
IccO
Operating current
IccOFF
VTHCTH
Vcc=14V
Timer latch circuit current
Vcc=Vcc(STOP) + 0.2V
CT term."H" threshold voltage
VTHCTL
CT term."L" threshold voltage
CT
ITIMEOFFIN
CT term. input current
(timer off mode)
ITIMEOFFOUT
CT term. output current
(timer on mode)
VB
Reference voltage
IB
Input bias current
AVO
Open loop gain
fT
Unity gain bandwidth
IOS
Output source current
VOm + Output voltage (High)
VOm - Output voltage (Low)
AVCS
CS term. input voltage gain
IB
Input bias burrent
TPDCS CS term. delay time
Delay time to output
Min
Vcc
(STOP)
11.5
7.6
3.5
90
7.5
0.9
0.8
3.5
0.4
70
-33
2.4
-300
-460
5.3
0
-5
Limits
Typ
12.5
8.3
Max Unit
35
V
13.5 V
9.0
V
4.2
5.1
V
180 270 µA
13
19 mA
2.0
3.0 mA
1.8
2.7 mA
4.0
4.5
V
0.7
1.0
V
115 165 µA
-14
-5 µA
2.5
-100
70
1
-370
5.8
0.2
3.0
-1
150
2.6
V
0 nA
dB
MHz
-240 µA
6.25 V
0.35 V
V/V
µA
nS
(2/9)