PRELIMINARY DATA: OM6516SC
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
V(BR)CES Collector Emitter
Breakdown Voltage
ICES Zero Gate Voltage
Drain Current
IGES Gate Emitter Leakage
Current
Parameter - ON
1000
V
0.25 mA
1.0 mA
±100 nA
VCE = 0
IC = 250 µA
VCE = Max. Rat., VGE = 0
VCE = 0.8 Max. Rat., VGE = 0
TC = 125°C
VGE = ±20 V
VCE = 0 V
VGE(th)
VCE(sat)
Gate Threshold Voltage
Collector Emitter
Saturation Voltage
VCE(sat) Collector Emitter
Saturation Voltage
Dynamic
4.5
6.5 V VCE = VGE, IC = 1 mA
3.0
V VGE = 15 V, IC = 15 A
TC = 25°C
4.0 4.5 V VGE = 15 V, IC = 15 A
TC = 125°C
gfs
Forward Transductance
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Switching-Resistive Load
5.5
2000
160
65
S VCE = 20 V, IC = 15 A
pF VGE = 0
pF VCE = 25 V
pF f = 1 mHz
Td(on) Turn-On Time
tr
Rise Time
Td(off) Turn-Off Delay Time
tf
Fall Time
Switching-Inductive Load
50
nS VCC = 600 V, IC = 15 A
200
nS VGE = 15 V, Rg = 3.3 ,
200
nS Tj = 125°C
300
nS
Td(off)
tf
Eoff
Turn-Off Delay Time
Fall Time
Turn-Off Losses
200
nS VCEclamp = 600 V, IC = 15 A
200
nS VGE = 15 V, Rg = 3.3
1.5
mWs L = 1 mH, Tj = 125°C
PRELIMINARY DATA: OM6520SC
IGBT CHARACTERISTICS
Parameter - OFF (see Note 1)
Min. Typ. Max. Units Test Conditions
V(BR)CES Collector Emitter
Breakdown Voltage
ICES Zero Gate Voltage
Drain Current
IGES Gate Emitter Leakage
Current
Parameter - ON
1000
V
0.25 mA
1.0 mA
±100 nA
VCE = 0
IC = 250 µA
VCE = Max. Rat., VGE = 0
VCE = 0.8 Max. Rat., VGE = 0
TC = 125°C
VGE = ±20 V
VCE = 0 V
VGE(th)
VCE(sat)
Gate Threshold Voltage
Collector Emitter
Saturation Voltage
VCE(sat) Collector Emitter
Saturation Voltage
Dynamic
4.5
6.5 V VCE = VGE, IC = 1 mA
3.0
V VGE = 15 V, IC = 15 A
TC = 25°C
4.0 4.5 V VGE = 15 V, IC = 15 A
TC = 125°C
gfs
Forward Transductance
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Switching-Resistive Load
5.5
2000
160
65
S VCE = 20 V, IC = 15 A
pF VGE = 0
pF VCE = 25 V
pF f = 1 mHz
Td(on) Turn-On Time
tr
Rise Time
Td(off) Turn-Off Delay Time
tf
Fall Time
Switching-Inductive Load
50
nS VCC = 600 V, IC = 15 A
200
nS VGE = 15 V, Rg = 3.3 ,
200
nS Tj = 125°C
300
nS
Td(off) Turn-Off Delay Time
tf
Fall Time
Eoff Turn-Off Losses
DIODE CHARACTERISTICS
200
nS VCEclamp = 600 V, IC = 15 A
200
nS VGE = 15 V, Rg = 3.3
1.5
mWs L = 1 mH, Tj = 125°C
Vf
Maximum Forward Voltage
Ir
Maximum Reverse Current
trr
Reverse Recovery Time
1.85 V IF = 30 A, TC = 25°C
1.70 V IF = 30 A, TC = 150°C
500 µA VR = 1000 V, TC = 25°C
7.0 mA VR = 800 V, TC = 125°C
50 nS IF = 1 A, di / dt = -15 A µ/S
VR = 30 V, Tj = 25°C
Note 1: Limited by diode Ir characteristic.