STS8C5H30L
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
N-CHANNEL
P-CHANNEL
VDS Drain-source Voltage (VGS = 0)
30
VDGR Drain-gate Voltage (RGS = 20 kΩ)
30
VGS Gate- source Voltage
± 16
± 16
ID
Drain Current (continuous) at TC = 25°C
Single Operating
8
4.2
ID
Drain Current (continuous) at TC = 100°C
Single Operating
6.4
3.1
IDM ( ) Drain Current (pulsed)
32
16.8
PTOT Total Dissipation at TC = 25°C Dual Operating
1.6
Total Dissipation at TC = 25°C Single Operating
2
Tj
Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
150
-55 to 150
Unit
V
V
V
A
A
A
W
W
°C
°C
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Single Operating
Dual Operating
Tl
Maximum Lead Temperature For Soldering Purpose
62.5
°C/W
78
°C/W
300
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
n-ch
30
p-ch
30
IDSS Zero Gate Voltage
VDS= Max Rating
n-ch
1
Drain Current (VGS = 0) VDS= Max Rating, TC= 125°C p-ch
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS= ± 16V
VGS= ± 16V
n-ch
p-ch
±100
±100
VGS(th) Gate Threshold Voltage VDS = VGS, ID= 250 µA
n-ch
1
p-ch
1
1.6
2.5
RDS(on) Static Drain-source On
Resistance
VGS= 10 V, ID= 4 A
VGS= 10 V, ID= 2.5 A
VGS= 4.5 V, ID= 4 A
VGS= 4.5 V, ID= 2.5 A
n-ch
p-ch
n-ch
p-ch
0.018
0.045
0.020
0.070
0.022
0.055
0.025
0.075
Unit
V
µA
µA
nA
nA
V
V
Ω
Ω
Ω
Ω
Table 6: Dynamic
Symbol
Parameter
gfs (1) Forward
Transconductance
Ciss Input Capacitance
Test Conditions
VDS = 15 V, ID= 4 A
VDS = 15 V, ID= 2.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Coss Output Capacitance
Crss Reverse Transfer
Capacitance
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
2/11
Min.
Typ. Max. Unit
8.5
S
10
S
857
pF
1350
pF
147
pF
490
pF
20
pF
130
pF