STL24N60M2 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STL24N60M2

N-channel 600 V, 0.186 Ω typ., 18 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 8x8 HV package

STMicroelectronics 

STL24N60M2

Symbol

ISD(1)

ISDM(1)(2)

VSD (3)

trr

Qrr

IRRM

trr

Qrr

IRRM

Parameter

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery

charge

Reverse recovery

current

Reverse recovery time

Reverse recovery

charge

Reverse recovery

current

Table 8: Source drain diode

Test conditions

Electrical characteristics

Min. Typ. Max. Unit

-

18 A

-

72 A

VGS = 0 V, ISD = 18 A

-

1.6 V

ISD = 18 A, di/dt = 100 A/µs,

- 332

ns

VDD = 60 V (see Figure 16: " Test

circuit for inductive load

-

4

µC

switching and diode recovery

times")

- 24

A

ISD = 18 A, di/dt = 100 A/µs,

- 450

ns

VDD = 60 V, Tj = 150 °C

(see Figure 16: " Test circuit for

- 5.5

µC

inductive load switching and

diode recovery times")

- 25

A

Notes:

(1)The value is limited by package.

(2)Pulse width is limited by safe operating area

(3)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

DocID024777 Rev 3

5/15

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