STL24N60M2(2014) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL24N60M2
(Rev.:2014)
(Rev.:2014)
STMicroelectronics
STL24N60M2 Datasheet PDF : 16 Pages
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STL24N60M2
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VGS Gate-source voltage
(1)
ID
Drain current (continuous) at TC = 25 °C
(1)
ID
Drain current (continuous) at TC = 100 °C
(1),(2)
IDM
Drain current (pulsed)
(1)
PTOT Total dissipation at TC = 25 °C
(3)
dv/dt Peak diode recovery voltage slope
(4)
dv/dt MOSFET dv/dt ruggedness
Tstg Storage temperature
Tj Max. operating junction temperature
1. The value is rated according to Rthj-case and limited by package.
2. Pulse width limited by safe operating area.
3. ISD ≤ 18 A, di/dt ≤ 400 A/μs, VDS(peak) < V(BR)DSS, VDD=400 V
4. VDS ≤ 480 V
± 25
18
12
72
125
15
50
- 55 to 150
150
Symbol
Table 3. Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
(1)
Rthj-pcb Thermal resistance junction-pcb max
1. When mounted on FR-4 board of inch², 2oz Cu.
Value
1
45
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Avalanche current, repetitive or not
IAR repetitive (pulse width limited by Tjmax)
3.5
Single pulse avalanche energy (starting
EAS Tj=25°C, ID= IAR; VDD=50)
180
Unit
V
A
A
A
W
V/ns
V
°C
°C
Unit
°C/W
°C/W
Unit
A
mJ
DocID024777 Rev 2
3/15
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