TPDV1025RG View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
TPDV1025RG Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
TPDVxx25
Table 2. Absolute maximum ratings (limiting values)
Symbol
Parameter
IT(RMS)
ITSM
I2t
dI/dt
VDRM
VRRM
On-state rms current (180° conduction angle)
Non repetitive surge peak on-state
current
I2t value for fusing
Critical rate of rise of on-state current
IG = 500 mA, dIG/dt = 1 A/µs
tp = 2.5 ms
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 50 Hz
TPDV825
Repetitive peak off-state voltage
TPDV1025
TPDV1225
Tstg
Tj
VINS(RMS)(1)
Storage junction temperature range
Operating junction temperature range
Insulation rms voltage
1. A1, A2, gate terminals to case for 1 minute
Tc = 85 °C
Tj = 25 °C
Tj = 25 °C
Tj = 125 °C
Value
Unit
25
A
390
250
A
230
265
A2S
100
A/µs
800
1000
V
1200
- 40 to + 150
°C
- 40 to + 125
2500
V
Table 3.
Symbol
Electrical Characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
Quadrant
Value Unit
IGT
VGT
VGD
tgt
IH (1)
VD = 12 V DC, RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
VD = VDRM IG = 500 mA dIG/dt = 3 A/µs
IT = 500 mA Gate open
IL
IG = 1.2 x IGT
dV/dt
VTM (1)
Vto(1)
Rd(1)
Linear slope up to: VD = 67% VDRM Gate open
ITM = 35 A tp = 380 µs
Threshold voltage
Dynamic resistance
IDRM
IRRM
VDRM = VRRM
(dV/dt)c = 200 V/µs
(dI/dt)c (1)
(dV/dt)c = 10 V/µs
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
I - II - III
I - II - III
I - II - III
I - III
II
MAX. 150
MAX. 1.5
MIN. 0.2
TYP. 2.5
TYP. 50
100
TYP.
200
MIN. 2000
MAX. 1.8
MAX. 1.1
MAX. 19
20
MAX.
8
20
MIN.
88
mA
V
V
µs
mA
mA
V/µs
V
V
mΩ
µA
mA
A/ms
1. For either polarity of electrode A2 voltage with reference to electrode A1.
2/7
Doc ID 18268 Rev 2
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