TPC8108 View Datasheet(PDF) - Toshiba

Part Name

Description

MFG CO.

TPC8108

Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

Toshiba 

TPC8108

rth − tw

1000

(1) Device mounted on a glass-epoxy board (a)

(Note 2a)

(2)

(2) Device mounted on a glass-epoxy board (b)

(Note 2b)

t = 10 s

(1)

100

10

1

0.1

0.001

0.01

0.1

1

10

Pulse width tw (S)

Safe operating area

−100

ID max (pulse) *

−10

10 ms*

1 ms*

−1

−0.1 * Single pulse

Ta = 25°C

Curves must be derated

linearly with increase in

temperature.

−0.01

−0.01

−0.1

−1

VDSS max

−10

Drain-source voltage VDS (V)

−100

Single pulse

100

1000

6

2002-03-12

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