TPC8108 View Datasheet(PDF) - Toshiba
Part Name
Description
MFG CO.
TPC8108 Datasheet PDF : 7 Pages
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TPC8108
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
IDSS
VDS = −30 V, VGS = 0 V
−10
µA
V (BR) DSS
V (BR) DSX
ID = −10 mA, VGS = 0 V
ID = −10 mA, VGS = 20 V
−30
V
−15
Vth
VDS = −10 V, ID = −1 mA
−0.8
−2.0
V
RDS (ON)
VGS = −4 V, ID = −5.5 A
VGS = −10 V, ID = −5.5 A
18.5 23
mΩ
9.5
13
|Yfs|
VDS = −10 V, ID = −5.5 A
12
24
S
Ciss
3510
Crss
VDS = −10 V, VGS = 0 V, f = 1 MHz
250
pF
Coss
600
tr
ton
VG−S100
V
V
tf
7
ID = −5.5 A
VOUT
16
ns
66
toff
VDD ∼− −15 V
Duty <= 1%, tw = 10 µs
230
Qg
Qgs1
Qgd
VDD ∼− −24 V, VGS = −10 V,
ID = −11 A
77
7.0
nC
20
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current Pulse (Note 1)
Forward voltage (diode)
Symbol
IDRP
VDSF
Test Condition
IDR = −11 A, VGS = 0 V
Min Typ. Max Unit
−44
A
1.2
V
3
2002-03-12
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