TPC8108 View Datasheet(PDF) - Toshiba

Part Name

Description

MFG CO.

TPC8108

Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

Toshiba 

Thermal Characteristics

Characteristics

Symbol

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2a)

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2b)

Rth (ch-a)

Rth (ch-a)

Max

65.8

125

Unit

°C/W

°C/W

Marking (Note 5)

TPC8108

TPC8108

※

TYPE

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a)

(b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8

(unit: mm)

FR-4

25.4 × 25.4 × 0.8

(unit: mm)

(a)

(b)

Note 3: VDD = −24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = −11 A

Note 4: Repetitive rating; pulse width limited by maximum channel temperature

Note 5: • on lower left of the marking indicates Pin 1.

※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of

manufacture: January to December are denoted by letters A to L respectively.)

2

2002-03-12

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