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TPC8108 View Datasheet(PDF) - Toshiba

Part Name
Description
MFG CO.
TPC8108 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
TPC8108
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPC8108
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
Small footprint due to small and thin package
Low drain-source ON resistance: RDS (ON) = 9.5 m(typ.)
High forward transfer admittance: |Yfs| = 24 S (typ.)
Low leakage current: IDSS = −10 µA (max) (VDS = 30 V)
Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
V
30
V
±20
V
11
A
44
1.9
W
1.0
W
157
mJ
11
A
0.19
mJ
150
°C
55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEDEC
JEITA
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
1
2002-03-12

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