STS3DPFS40 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STS3DPFS40
STMicroelectronics
STS3DPFS40 Datasheet PDF : 6 Pages
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 20 V, ID = 1.5 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 20 V, ID = 3 A,
VGS = 10 V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Condit ions
VDD = 20 V, ID = 1.5 A,
RG = 4.7Ω, VGS = 10 V
(see test circuit, Figure 3)
Vclamp = 32 V, ID = 3 A,
RG = 4.7Ω, VGS = 10 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 3 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 3 A, di/dt = 100A/µs,
VDD = 15 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
IR(*)
Reversed Leakage Current TJ = 25 °C , VR = 30 V
TJ = 125 °C , VR = 30 V
VF(*)
Forward Voltage Drop
TJ = 25 °C , IF = 3 A
TJ = 125 °C , IF = 3 A
STS3DPFS40
Min. Typ. Max. Unit
20
ns
25
ns
24.5
33
nC
4
nC
5.5
nC
Min .
Typ.
100
22
20
11
35
Max.
Unit
ns
ns
Min. Typ. Max. Unit
3
A
12
A
2
V
34
ns
45
nC
2.6
A
Min. Typ. Max. Unit
0.2
mA
0.03
100
mA
0.51
V
0.42 0.46
V
3/6
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