STPS3L60SY View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STPS3L60SY Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS3L60-Y
Table 2.
Symbol
Absolute ratings (limiting values)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
60
IF(RMS) Forward rms current
10
IF(AV) Average forward current
TC = 100 °C δ = 0.5
3
IFSM
Surge non repetitive forward
current
tp = 10 ms Sinusoidal
75
IRRM Repetitive peak reverse current tp = 2 µs square F=1 kHz
1
PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C
1600
Tstg Storage temperature range
Tj
Operating junction temperature range(1)
-65 to +175
-40 to +150
dV/dt Critical rate of rise reverse voltage
10000
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j---–----a----)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistances
V
A
A
A
A
W
°C
°C
V/µs
Symbol
Parameter
Value
Unit
Rth (j-l)
Junction to leads
20
° C/W
Table 4.
Symbol
Static electrical characteristics
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1)
Tj = 25 °C
Reverse leakage current
Tj = 125 °C
VR = VRRM
Tj = 25 °C IF = 3 A
VF (1) Forward voltage drop
Tj = 125 °C
Tj = 25 °C
IF = 3 A
IF = 6 A
Tj = 125 °C IF = 6 A
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.54 x IF(AV) + 0.037x IF2(RMS)
55
µA
10
15
mA
0.7
0.56 0.65
V
0.94
0.67 0.76
2/7
Doc ID 17537 Rev 1
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