STPS3045C-YS View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STPS3045C-YS Datasheet PDF : 7 Pages
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STPS3045C-Y
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
PF(AV)(W)
12
11
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
10
9
8
7
6
5
4
3
2
1
IF(AV)(A)
0
0
2
4
6
8
10
12
14
δ=1
T
δ=tp/T
tp
16
18
20
IF(AV)(A)
18
16
14
12
10
8
Rth(j-a)=15°C/W
6
T
4
2
δ=tp/T
0
0
25
tp
50
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(Tj)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
IM(A)
200
180
160
140
120
100
80
60
40
IM
t
20
δ=0.5
0
1.E-03
1.E-02
t(s)
1.E-01
TC=75°C
TC=100°C
TC=125°C
1.E+00
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
T
tp(s)
1.E-01
δ=tp/T
tp
1.E+00
Doc ID 17264 Rev 1
3/7
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