STPS3045C-Y View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STPS3045C-Y Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS3045C-Y
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
VRRM
IF(RMS)
Repetitive peak reverse voltage
Forward rms voltage
IF(AV) Average forward current δ = 0.5
Per diode
TC = 155 °C Per device
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
Tstg Storage temperature range
Tj
Maximum operating junction temperature(1)
dV/dt Critical rate of rise reverse voltage
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j---–----a----)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance parameters
Symbol
Parameter
Rth (j-c)
Rth (c)
Junction to case
Coupling
Per diode
Total
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
Unit
45
V
30
A
10
A
30
220
A
6000
W
-65 to +175 °C
-40 to +175 °C
10000 V/µs
Value
1.60
0.85
0.10
Unit
° C/W
° C/W
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min.
IR (1)
Tj = 25 °C
Reverse leakage current
VR = VRRM
-
Tj = 125 °C
-
Tj = 125 °C IF = 15 A
-
VF (1) Forward voltage drop
Tj = 25 °C
-
IF = 30 A
Tj = 125 °C
-
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.01 IF2(RMS)
Typ.
-
11
0.5
-
0.65
Max. Unit
200 µA
40 mA
0.57
0.84 V
0.72
2/7
Doc ID 17264 Rev 1
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