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STM32F030R4P6 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
STM32F030R4P6 Datasheet PDF : 91 Pages
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STM32F030x4/x6/x8/xC
Electrical characteristics
Symbol
Parameter
Table 46. I/O static characteristics (continued)
Conditions
Min
Typ
Max
Unit
TC, FT and FTf I/O
TTa in digital mode
-
-
± 0.1
VSS VIN VDDIOx
Ilkg
Input leakage
current(2)
TTa in digital mode
VDDIOx VIN VDDA
-
TTa in analog mode
VSS VIN VDDA
-
FT and FTf I/O (3)
VDDIOx VIN 5 V
-
-
1
µA
-
± 0.2
-
10
Weak pull-up
RPU equivalent resistor VIN = VSS
(4)
25
40
55
kΩ
Weak pull-down
RPD equivalent
resistor(4)
VIN = VDDIOx
25
40
55
kΩ
CIO I/O pin capacitance
-
-
5
-
pF
1. Data based on design simulation only. Not tested in production.
2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 45:
I/O current injection susceptibility.
3. To sustain a voltage higher than VDDIOx + 0.3 V, the internal pull-up/pull-down resistors must be disabled.
4. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 18 for standard I/Os, and in Figure 19 for
5 V tolerant I/Os. The following curves are design simulation results, not tested in
production.
DocID024849 Rev 3
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