STGP7NB60KDFP(2004) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STGP7NB60KDFP
(Rev.:2004)

N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH™ IGBT

STMicroelectronics 

STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCES

VECR

VGE

IC

IC

ICM ( )

PTOT

VISO

Tstg

Tj

Collector-Emitter Voltage (VGS = 0)

Emitter-Collector Voltage

Gate-Emitter Voltage

Collector Current (continuous) at TC = 25°C

Collector Current (continuous) at TC = 100°C

Collector Current (pulsed)

Total Dissipation at TC = 25°C

Derating Factor

Insulation Withstand Voltage A.C.(t= 1 sec; Tc= 25°C)

Storage Temperature

Max. Operating Junction Temperature

( ) Pulse width limited by safe operating area

Value

Unit

STGP7NB60KD

STGB7NB60KD

STGP7NB60KDFP

600

V

20

V

±20

V

14

A

7

A

56

A

80

25

W

0.64

0.20

W/°C

--

2500

V

–55 to 150

°C

150

°C

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max

Rthj-amb Thermal Resistance Junction-ambient Max

TO-220

D2PAK

1.56

TO-220FP

5

62.5

°C/W

°C/W

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

VBR(CES) Collector-Emitter Breakdown IC= 250 µA, VGE= 0

600

Voltage

ICES Collector cut-off

(VGE = 0)

VCE= Max Rating, TC= 25°C

VCE= Max Rating, TC= 125°C

IGES

Gate-Emitter Leakage

Current (VCE = 0)

VGE= ±20V, VCE= 0

Max.

50

500

±100

ON (1)

Symbol

VGE(th)

VCE(sat)

Parameter

Gate Threshold Voltage

Collector-Emitter Saturation

Voltage

Test Conditions

VCE = VGE, IC = 250µA

VGE = 15V, IC = 7 A

VGE= 15V, IC= 7 A, Tj= 125°C

Min.

5

Typ.

2.3

1.9

Max.

7

2.8

Unit

V

µA

µA

nA

Unit

V

V

V

2/12

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