MX29F002BQC-70 View Datasheet(PDF) - Macronix International

Part Name

Description

MFG CO.

MX29F002BQC-70

2M-BIT [256K x 8] CMOS FLASH MEMORY

Macronix International 

MX29F002/002N T/B

ERASE AND PROGRAMMING PERFORMANCE(1)

PARAMETER

MIN.

LIMITS

TYP.(2)

Sector Erase Time

Chip Erase Time

Byte Programming Time

Chip Programming Time

Erase/Program Cycles

1

3

7

3.5

100,000

Note: 1.Not 100% Tested, Excludes external system level over head.

2.Typical values measured at 25° C, 5V.

3.Maximum values measured at 25° C, 4.5V.

MAX.(3)

8

24

210

10.5

UNITS

s

s

us

sec

Cycles

LATCH-UP CHARACTERISTICS

Input Voltage with respect to GND on all pins except I/O pins

Input Voltage with respect to GND on all I/O pins

Current

Includes all pins except Vcc. Test conditions: Vcc = 5.0V, one pin at a time.

MIN.

-1.0V

-1.0V

-100mA

MAX.

13.5V

Vcc + 1.0V

+100mA

DATA RETENTION

PARAMETER

Data Retention Time

MIN.

20

UNIT

Years

P/N: PM0547

REV. 1.5, MAR. 28, 2005

46

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